Unveiling Planar Defects in Hexagonal Group IV Materials

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality essential assess the intrinsic electronic and optical properties of these unaffected by structural defects. Here, we identify previously unknown partial planar defect in type I3 basal stacking fault investigate its properties. Electron microscopy atomistic modeling used reconstruct visualize this terminating dislocations crystal. From band structure calculations coupled photoluminescence measurements, conclude does not create states within hex-Ge hex-Si gap. Therefore, detrimental optoelectronic hex-SiGe family. Finally, highlighting can be great interest community hex-III-Ns, where also present.